Convergence of a finite volume scheme to the eigenvalues of a Schrödinger operator

We consider the approximation of a Schrödinger eigenvalue problem arising from the modeling of semiconductor nanostructures by a finite volume method in a bounded domain Ω ⊂ R. In order to prove its convergence, a framework for finite dimensional approximations to inner products in the Sobolev space H 0 (Ω) is introduced which allows to apply well known results from spectral approximation theory. This approach is used to obtain convergence results for a classical finite volume scheme for isotropic problems based on two point fluxes, and for a finite volume scheme for anisotropic problems based on the consistent reconstruction of nodal fluxes. In both cases, for twoand three-dimensional domains we are able to prove first order convergence of the eigenvalues if the corresponding eigenfunctions belong to H(Ω). The construction of admissible meshes for finite volume schemes using the DelaunayVoronöı method is discussed. As numerical examples, a number of one-, twoand three-dimensional problems relevant to the modeling of semiconductor nanostructures is presented. In order to obtain analytical eigenvalues for these problems, a matching approach is used. To these eigenvalues, and to recently published highly accurate eigenvalues for the Laplacian in the L-shape domain, the results of the implemented numerical method are compared. In general, for piecewise H regular eigenfunctions, second order convergence is observed experimentally.